Product details
S8050 NPN TO92 General Purpose BJT Transistor - Pack of 5
The S8050 is a general-purpose NPN Bipolar Junction Transistor (BJT) designed for switching and amplification applications. Housed in a compact TO-92 package, it is suitable for through-hole PCB assembly and is commonly used in consumer electronics, educational projects, prototype development, and general-purpose electronic circuits. Its compact form factor allows for easy integration into a wide variety of circuit designs.
The transistor is designed for use as a 2W output amplifier in portable radios operating in Class B push-pull configurations. It is complementary to the SS8550 transistor and supports a collector current of up to 1.5A, making it suitable for low-power amplification, signal processing, and switching applications. The S8050 combines reliable electrical performance with a compact package for a broad range of electronic designs.
With a collector-emitter voltage (VCEO) of 25V, collector-base voltage (VCBO) of 40V, emitter-base voltage (VEBO) of 6V, and power dissipation of 1W at 25°C, the S8050 is suitable for designers, students, hobbyists, and engineers working on analog and digital electronic circuits. The TO-92 package enables convenient installation and replacement in both prototype and production assemblies.
Features:
• General-purpose NPN Bipolar Junction Transistor (BJT).
• Compact TO-92 through-hole package for convenient PCB mounting.
• Designed as a 2W output amplifier for portable radios operating in Class B push-pull configuration.
• Complementary transistor to the SS8550.
• Collector-emitter voltage (VCEO) rated at 25V.
• Supports collector current up to 1.5A.
• Power dissipation rated at 1W at 25°C.
• DC current gain (hFE) up to 300.
• Suitable for switching, amplification, and signal processing applications.
• Designed for consumer electronics, educational projects, and general-purpose circuit development.
The S8050 is a general-purpose NPN Bipolar Junction Transistor (BJT) designed for switching and amplification applications. Housed in a compact TO-92 package, it is suitable for through-hole PCB assembly and is commonly used in consumer electronics, educational projects, prototype development, and general-purpose electronic circuits. Its compact form factor allows for easy integration into a wide variety of circuit designs.
The transistor is designed for use as a 2W output amplifier in portable radios operating in Class B push-pull configurations. It is complementary to the SS8550 transistor and supports a collector current of up to 1.5A, making it suitable for low-power amplification, signal processing, and switching applications. The S8050 combines reliable electrical performance with a compact package for a broad range of electronic designs.
With a collector-emitter voltage (VCEO) of 25V, collector-base voltage (VCBO) of 40V, emitter-base voltage (VEBO) of 6V, and power dissipation of 1W at 25°C, the S8050 is suitable for designers, students, hobbyists, and engineers working on analog and digital electronic circuits. The TO-92 package enables convenient installation and replacement in both prototype and production assemblies.
Features:
• General-purpose NPN Bipolar Junction Transistor (BJT).
• Compact TO-92 through-hole package for convenient PCB mounting.
• Designed as a 2W output amplifier for portable radios operating in Class B push-pull configuration.
• Complementary transistor to the SS8550.
• Collector-emitter voltage (VCEO) rated at 25V.
• Supports collector current up to 1.5A.
• Power dissipation rated at 1W at 25°C.
• DC current gain (hFE) up to 300.
• Suitable for switching, amplification, and signal processing applications.
• Designed for consumer electronics, educational projects, and general-purpose circuit development.
