Product details
2N2907 PNP Bipolar Junction Transistor (TO-18)-Pack of 5
The 2N2907 is a general-purpose PNP Bipolar Junction Transistor (BJT) designed for low-power switching and amplification applications. Packaged in a TO-18 metal can, it is suitable for through-hole mounting and is widely used in consumer electronics, industrial equipment, educational projects, and general-purpose electronic circuit designs.
The transistor supports a collector-emitter voltage (VCEO) of 40V and a maximum collector current of 600mA, making it suitable for signal switching, driver circuits, and analog amplification. It also offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 100, providing dependable performance across a variety of low-power electronic applications.
Designed for reliable operation, the 2N2907 features a maximum power dissipation of 400mW and is commonly used as the complementary PNP transistor to the 2N2222 in amplifier and switching circuits. Its through-hole TO-18 package allows easy installation, soldering, and replacement during prototype development and production assembly.
Features:
• General-purpose PNP Bipolar Junction Transistor (BJT).
• TO-18 metal can package for through-hole mounting.
• Suitable for switching and amplification applications.
• Collector-emitter voltage (VCEO) rated at 40V.
• Collector current up to 600mA.
• Power dissipation of 400mW.
• Transition frequency of 200MHz.
• Minimum DC current gain (hFE) of 100.
• Complementary transistor to the 2N2222.
• Suitable for consumer electronics, industrial, and educational applications
The 2N2907 is a general-purpose PNP Bipolar Junction Transistor (BJT) designed for low-power switching and amplification applications. Packaged in a TO-18 metal can, it is suitable for through-hole mounting and is widely used in consumer electronics, industrial equipment, educational projects, and general-purpose electronic circuit designs.
The transistor supports a collector-emitter voltage (VCEO) of 40V and a maximum collector current of 600mA, making it suitable for signal switching, driver circuits, and analog amplification. It also offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 100, providing dependable performance across a variety of low-power electronic applications.
Designed for reliable operation, the 2N2907 features a maximum power dissipation of 400mW and is commonly used as the complementary PNP transistor to the 2N2222 in amplifier and switching circuits. Its through-hole TO-18 package allows easy installation, soldering, and replacement during prototype development and production assembly.
Features:
• General-purpose PNP Bipolar Junction Transistor (BJT).
• TO-18 metal can package for through-hole mounting.
• Suitable for switching and amplification applications.
• Collector-emitter voltage (VCEO) rated at 40V.
• Collector current up to 600mA.
• Power dissipation of 400mW.
• Transition frequency of 200MHz.
• Minimum DC current gain (hFE) of 100.
• Complementary transistor to the 2N2222.
• Suitable for consumer electronics, industrial, and educational applications
